Cart (Loading....) | Create Account
Close category search window
 

Thermodynamic investigations of solid‐state Si‐metal interactions. II. General analysis of Si‐metal binary systems

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Gong, S.F. ; Department of Physics and Measurement Technology, University of Linköping, S‐581 83 Linköping, Sweden ; Hentzell, H.T.G.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.347162 

Silicides, amorphous alloys, and metal‐induced crystallization of amorphous Si are commonly encountered in solid‐state reactions between Si and metals. In order to investigate the possible correlations between these phenomena, a thermodynamic analysis was made on various binary systems consisting of Si and metals. It was revealed that (1) the capability of forming silicides between Si and a transition metal results from the largely negative heat of mixing in a certain medium composition range of the two elements; (2) amorphous Si‐metal alloys may form not only in the systems which form silicides, but also in some systems which do not form stable silicides; and (3) the phenomenon of metal‐induced crystallization of amorphous Si occurs in a Si‐rich composition range of a binary system, which is attributed to the lowering of Si—Si bonding energy, owing to the incorporation of metal species. A model describing the phenomenon is developed.

Published in:

Journal of Applied Physics  (Volume:68 ,  Issue: 9 )

Date of Publication:

Nov 1990

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.