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High‐quality GaAs films with a dislocation density of 2×106 cm-2 on (100) Si substrates have been obtained by thermal cycle annealing using the metalorganic chemical vapor deposition method. Dislocation behavior in GaAs/Si has been considered. Significant reduction effects of dislocation density in the GaAs layers on Si due to thermal annealing have been analyzed by a simple model, in which annihilation such as coalescence of dislocations is assumed to be caused by dislocation movement under high thermal stress and temperature. Numerical analysis suggests that excellent quality GaAs/Si films with a dislocation density of less than 105 cm-2 will be realized if thermal cycle annealing is carried out more than 1000 times without thermal degradation of the GaAs/Si.