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A 3 GHz transimpedance OEIC receiver for 1.3-1.55 mu m fiber-optic systems

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7 Author(s)

A high-performance metal-semiconductor-metal high-electron-mobility transistor (MSM-HEMT) transimpedance photoreceiver fabricated using OMCVD-grown InAlAs/InGaAs heterostructures on an InP substrate is discussed. This is the first demonstration of a monolithically integrated receiver amplifier that incorporates a cascode amplifier stage and a Schottky diode level-shifting stage implemented on InP-based optoelectronic integrated circuit (OEIC) photoreceivers. The transimpedance amplifier has an open-loop gain of 5.7 and a bandwidth of 3.0 GHz, which represent the highest gain and the highest speed performance reported for 1.3-1.55- mu m-wavelength OEIC receivers.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:2 ,  Issue: 3 )