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Direct oxinitride synthesis by multipulse excimer laser irradiation of silicon wafers in a nitrogen‐containing ambient environment

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9 Author(s)
Craciun, V. ; Central Institute of Physics, Bucharest, Romania ; Mihailescu, I.N. ; Oncioiu, Gh. ; Luches, A.
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The direct synthesis of silicon oxinitride films by multipulse excimer (λ=308 nm) laser irradiation in a nitrogen‐containing ambient gas is reported featuring characteristics consistent with potential application in microelectronics.

Published in:

Journal of Applied Physics  (Volume:68 ,  Issue: 5 )