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Boron diffusivity in nonimplanted diamond single crystals measured by impedance spectroscopy

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2 Author(s)
Narducci, Dario ; IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 ; Cuomo, Jerome J.

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Boron diffusivity in single‐crystal diamond has been investigated. To this aim, a novel method using impedance spectroscopy for the study of the atomic diffusivity in wide‐gap semiconductor has been developed, along with a model for the analysis of the dielectric response function. The advantages of this procedure are discussed. Boron diffusivity in diamond has been determined to be 6.9×10-20 cm2 s-1 at 800 °C. A discussion of the results and a comparison with previous estimates are presented.

Published in:

Journal of Applied Physics  (Volume:68 ,  Issue: 3 )