Cart (Loading....) | Create Account
Close category search window
 

Scanning electron microscopy investigations of the initial degradation mechanism of GaAs quantum well lasers grown on silicon substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Martins, R.B. ; Centre National d’Etude des Télécommunications, CNET, 196, Avenue Henri Ravera, F‐92220 Bagneux, France. ; Henoc, P. ; Akamatsu, B. ; Bartenlian, G.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.346656 

Cathodoluminescence and electron beam induced current are used to investigate the degradation of the graded‐index separate‐confining heterostructure laser devices grown on silicon substrates. By examining the evolution of the microscopic electronic properties of these devices during operation or under electron beam bombardment, a better understanding of the initial mechanism of degradation in a laser device results: it is concluded from this study that the degradation starts in the vicinity of the p‐n junction before attaining the active layer or the formation of dark line defects. This starting of degradation is attributed to the point‐defect migration or coupling in the space‐charge region. The built‐in electrical field plus the nonradiative recombination of excesses carriers seems to be related to these phenomena. It is also pointed out that the technological processes for device fabrication have a strong influence on the degradation mechanism.

Published in:

Journal of Applied Physics  (Volume:68 ,  Issue: 3 )

Date of Publication:

Aug 1990

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.