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980 nm diode laser for pumping Er/sup 3+/-doped fiber amplifiers

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5 Author(s)
Bour, D.P. ; David Sarnoff Res. Center, Princeton, NJ, USA ; Dinkel, N.A. ; Gilbert, D.B. ; Fabian, K.B.
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A high-power 980-nm diode laser, whose performance satisfies the requirements for pumping Er/sup 3+/-doped optical fiber amplifiers, is described. The device is grown by atmospheric pressure organometallic vapor-phase epitaxy and contains a strained, step-graded In/sub 0.25/Ga/sub 0.75/As/AlGaAs single-quantum-well active region. The threshold current of the ridge-waveguide laser is 8 mA, and a CW power output of 125 mW with a different quantum efficiency of 59% is demonstrated.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:2 ,  Issue: 3 )

Date of Publication:

March 1990

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