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High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy

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5 Author(s)
Savolainen, Pekka ; Dept. of Phys., Tampere Univ. of Technol., Finland ; Toivonen, Mika ; Asonen, H. ; Pessa, M.
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High-performance strained-layer GaInAs-GaInAsP-GaInP separate-confinement quantum-well lasers emitting at /spl lambda/=980 nm were grown by all solid-source molecular-beam epitaxy. Valved cracker cells were employed to generate group-V beam fluxes. Fabricated ridge-waveguide lasers exhibited stable, kink-free, single-mode operation up to 260 mW. A maximum output power of 550 mW was achieved. Complete thermal roll-over tests were done tens of times without any sign of degradation for p-side up-mounted lasers. Preliminary lifetime tests for over 4500 h at 150-mW power level indicate that these aluminum-free pump lasers are very reliable sources for pumping light into erbium-doped fiber amplifiers.

Published in:

Photonics Technology Letters, IEEE  (Volume:8 ,  Issue: 8 )