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Low-threshold piezoelectric-strained InGaAs-GaAs QW lasers grown on (211)B oriented GaAs substrates

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4 Author(s)
Sale, T.E. ; Dept. of Electron. & Electr. Eng., Sheffield Univ., UK ; Roberts, J.S. ; Whitbread, N.D. ; Robson, P.N.

We report the operation of strained layer In/sub 0.20/Ga/sub 0.80/As quantum well lasers grown on (211)B GaAs substrates, thus incorporating a piezoelectric field. Growth was by atmospheric pressure metal-organic vapor phase epitaxy (MOVPE). The threshold current density of a 1000 μm×75 μm device is 91 A/spl middot/cm/sup -2/ and waveguide transparency is estimated at 32 A/spl middot/cm/sup -2/ for a simple separate confinement heterostructure (SCH) emitting at 982 nm.

Published in:

Photonics Technology Letters, IEEE  (Volume:8 ,  Issue: 8 )