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A two‐layer model to explain the thickness dependence of conductivity and thermoelectric power of semiconductor thin films and application of the model to PbTe thin films

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2 Author(s)
Damodara Das, V. ; Thin Film Laboratory, Department of Physics, Indian Institute of Technology, Madras 600 036, India ; Bhat, K.Seetharama

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A two‐layer model to explain the thickness dependence of conductivity and thermoelectric power of semiconducting thin films has been developed assuming that the film is a parallel combination of resistances of the three layers: The first is the interior ‘‘grain‐boundary’’ layer, and the other two, outer layers on opposite sides, whose conductivities are altered by the band bending (and is also affected by surface‐gas interactions). The equations obtained in this model lead to an inverse thickness dependence of both the conductivity and thermoelectric power of thin films. The model is applied to analyze the conductivity and thermoelectric variation with thickness of PbTe thin films and the parameters Ug, the energy dependence of the ‘‘grain‐boundary’’ mean free path lg, and σg the surface conductivity, have been evaluated.

Published in:

Journal of Applied Physics  (Volume:67 ,  Issue: 8 )

Date of Publication:

Apr 1990

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