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Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)

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4 Author(s)
Xie, Q. ; Photonic Mater. & Devices Lab., Univ. of Southern California, Los Angeles, CA, USA ; Kalburge, A. ; Chen, P. ; Madhukar, A.

We report the first observation of lasing from vertically self-organized multiple stacks of electronically uncoupled InAs three-dimensional island quantum boxes grown via molecular beam epitaxy on GaAs (001) substrates. A low-threshold current density of 310 A/cm/sup 2/ at 79 K is found for a stack of five sets of islands corresponding to 2 ML InAs depositions separated by 36 monolayer GaAs spacers grown via migration enhanced epitaxy. The distribution of the island volumes (1.5/spl times/10/sup 5/ /spl Aring//sup 3/-4 /spl times/10/sup 5/ /spl Aring//sup 3/) gives, as expected, a multitude of laser lines between 980 mm and 996 nm.

Published in:

Photonics Technology Letters, IEEE  (Volume:8 ,  Issue: 8 )