By Topic

Spectroscopic ellipsometry studies of crystalline silicon implanted with carbon ions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Nguyen, N.V. ; Materials Research Laboratory and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 ; Vedam, K.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The composition and structure of crystalline silicon implanted with carbon ions at high dose were studied using spectroscopic ellipsometry. A brief description of our spectroscopic ellipsometer system and the modeling method adopted for the analysis of the data are included. The crystal damage caused by carbon‐ion implantation in the as‐implanted sample was characterized as an amorphous region of atomic or chemical mixture of silicon and carbon atoms. The recrystallization of Si and the formation of crystalline silicon carbide on annealing these specimens at 800 °C and 1000 °C were investigated through similar spectroscopic ellipsometry studies.

Published in:

Journal of Applied Physics  (Volume:67 ,  Issue: 8 )