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Electrical properties of (CuIn)1-zMn2zTe2 alloys

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3 Author(s)
Porras, G.Sanchez ; Centro de Estudios de Semiconductores, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela ; Quintero, M. ; Wasim, S.M.

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The electrical transport properties between 80 and 300 K of polycrystalline samples of (CuIn)1-zMn2zTe2 semimagnetic semiconducting alloys are studied. These are found to have disordered chalcopyrite α(z≤0.1), ordered chalcopyrite α’ (0.1≪z≤0.25), and ordered zinc‐blende β’ (0.25≪z≤0.57) structures. From an analysis of the electrical data, the values of the activation energy EA, density of states effective mass of the holes mp, valence‐band deformation potential Eac, and the concentration of the ionized impurities Ni for the alloys are estimated. The linear behavior is observed of mp with z, with a discontinuity when the structure of the alloys changes from α’ to β’. However, the extrapolated value of mp at z=0 from the region of chalcopyrite structure is in close agreement with that of p‐type CuInTe2. On the other hand, the deformation potential of the valence‐band varies linearly with z.

Published in:

Journal of Applied Physics  (Volume:67 ,  Issue: 7 )