By Topic

Polystyrene thin film formed by synchrotron radiation chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Yamada, H. ; Department of Electronic‐Mechanical Engineering Faculty of Engineering, Nagoya University, Furo‐cho, Chikusa‐ku, Nagoya 464‐01, Japan ; Nakamura, M. ; Katoh, H. ; Hayakawa, Tetsuo
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Formation of polystyrene thin film by the synchrotron radiation chemical vapor‐deposition method was investigated using a styrene monomer. Polystyrene film was deposited at the irradiated area and vicinity along the irradiated area on a Si substrate. The deposition rate depended on the monomer gas pressure, substrate temperature, and x‐ray wavelength. Polystyrene film at the irradiated area was insoluble in benzene solvent, while that at the unirradiated area was easily dissolved. A patterned film deposition could be successfully performed under an irradiation of synchrotron radiation through a Ni mesh mask. The pattern profile was influenced by the gap length between the Si substrate and mask and a clear pattern was obtained after benzene treatment.

Published in:

Journal of Applied Physics  (Volume:67 ,  Issue: 5 )