By Topic

Formation of β‐SiC at the interface between an epitaxial Si layer grown by rapid thermal chemical vapor deposition and a Si substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Ki-Bum Kim ; Philips Research Laboratories Sunnyvale, Signetics Company, Sunnyvale, California 94088‐3409 ; Maillot, Philippe ; Morgan, A.E. ; Kermani, Ahmad
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.345559 

The formation of β‐SiC during rapid thermal chemical vapor deposition of an epitaxial Si layer on a (100) Si substrate has been demonstrated using high‐resolution cross‐sectional transmission electron microscopy and secondary ion mass spectrometry (SIMS) depth profiling. Ellipsoidal β‐SiC precipitates (3×10 nm2 average size) were found with a density of (6±1)×109 cm-2 along the epilayer/substrate interface. SIMS revealed about 0.2 monolayer of carbon concentrated at the interface. The precipitates were shown to form during the hydrogen prebake as a result of improper surface cleaning. The crystalline quality of the epitaxial layer, however, was unaffected by the presence of the β‐SiC.

Published in:

Journal of Applied Physics  (Volume:67 ,  Issue: 4 )