By Topic

The role of hydrogen dilution in deposition of a‐SiC:H from silane/ethylene mixtures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Meikle, Scott ; Graduate School of Electronic Science and Technology, Research Institute of Electronics, Shizuoka University, 3‐5‐1 Johoku, Hamamatsu, 432 Japan ; Suzuki, Yoshiko ; Hatanaka, Yoshinori

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.345789 

The effect of hydrogen dilution on deposition of a‐SiC:H from silane/ethylene mixtures has been investigated by analyzing deposited films using optical absorption and x‐ray photoelectron spectroscopy (XPS) measurements. Film deposition rate and stoichiometry are found to be sensitive to the hydrogen dilution rate and it is proposed that ethylene decomposes through a two stage reaction with atomic hydrogen. Films with similar stoichiometries deposited using different combinations of ethylene, silane, and hydrogen and are found to have the steepest optical absorption edge when the ethylene/silane ratio is low and when the hydrogen partial pressure fraction is at 80%–85% of the total pressure. XPS measurements show that the density of SiC bonds increases as the slope of the optical edge becomes steeper.

Published in:

Journal of Applied Physics  (Volume:67 ,  Issue: 2 )