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Development of accurate on-wafer, cryogenic characterization techniques

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5 Author(s)
Laskar, J. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA ; Bautista, J.J. ; Nishimoto, M. ; Hamai, M.
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Significant advances in the development of high electron mobility field-effect transistors (HEMT's) have resulted in cryogenic, low-noise amplifiers (LNA's) whose noise temperatures are within an order of magnitude of the quantum noise limit (hν/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting-insulator-superconducting (SIS) front-ends in the 1-100 GHz frequency band. Key to identification of the best HEMT's and optimization of cryogenic LNA's is accurate and repeatable device measurements at cryogenic temperatures. A cryogenic on-wafer noise and scattering parameter measurement system has been developed to provide a systematic investigation of HEMT noise characteristics. In addition, an improved parameter extraction technique has been developed to help understand the relationship between device structure and LNA performance

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:44 ,  Issue: 7 )