Referenced Items are not available for this document.
Significant advances in the development of high electron mobility field-effect transistors (HEMT's) have resulted in cryogenic, low-noise amplifiers (LNA's) whose noise temperatures are within an order of magnitude of the quantum noise limit (hν/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting-insulator-superconducting (SIS) front-ends in the 1-100 GHz frequency band. Key to identification of the best HEMT's and optimization of cryogenic LNA's is accurate and repeatable device measurements at cryogenic temperatures. A cryogenic on-wafer noise and scattering parameter measurement system has been developed to provide a systematic investigation of HEMT noise characteristics. In addition, an improved parameter extraction technique has been developed to help understand the relationship between device structure and LNA performance
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:44
,
Issue:
7
)
Date of Publication: Jul 1996
- Page(s):
- 1178 - 1183
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 5349446
- Digital Object Identifier :
- 10.1109/22.508659
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jul 1996
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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