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Application of the charged point‐defect model to diffusion and interdiffusion in GaAs

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1 Author(s)
Cohen, R.M. ; Materials Science and Engineering Department, University of Utah, Salt Lake City, Utah 84112

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Diffusion and interdiffusion in GaAs and GaAs/AlGaAs superlattices are shown to be consistent with the charged point‐defect model. The charged Ga vacancies V3-Ga and interstitials I2+Ga appear to control group II, III, and probably V element diffusion. After adjustment for carrier concentration and As pressure, these elements are found to have a nearly identical intrinsic diffusivity and activation energy over a wide range of temperature. A natural consequence of Ga diffusion via negative or positive point defects is that enhanced group‐III interdiffusion is expected with either n‐ or p‐type doping. Anomalous enhancements in group‐II dopant diffusivity have been related to the supersaturation of Ga interstitials.

Published in:

Journal of Applied Physics  (Volume:67 ,  Issue: 12 )

Date of Publication:

Jun 1990

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