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X‐ray interferometry and its application to determination of layer thickness and strain in quantum‐well structures

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1 Author(s)
Holloway, H. ; Ford Motor Company, Research Staff, S3028, P. O. Box 2053, Dearborn, Michigan 48121‐2053

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.345189 

An analysis is made of x‐ray interference that occurs at the Bragg condition when two epitaxially related regions of the same material are separated by a thin layer of a different material. With optimal conditions, the effects of the separator layer are shown to be detectable at thicknesses down to one or two unit cells (6–12 Å), and its thickness may be measured with a precision of about 0.02 Å. Application of these results to the determination of misfit‐induced strain is discussed with particular reference to thin layers of Ga0.8In0.2As enclosed by GaAs.

Published in:

Journal of Applied Physics  (Volume:67 ,  Issue: 10 )

Date of Publication:

May 1990

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