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Cleavage energies in semiconductors

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4 Author(s)
Berding, M.A. ; SRI International, Menlo Park, California 94025 ; Krishnamurthy, Srinivasan ; Sher, A. ; Chen, A.‐B.

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We present a method for the calculation of the surface and cleavage energies, Eγ, for semiconductors, based on a tight‐binding Green’s function approach and a difference‐equation solution for the layered structure. Energies are calculated for a representative group of semiconductors, and cleavage energies are found to agree well with the available experimental data. We find ESiγ(111)=1360 ergs/cm2, and Eγ(110)=1000, 180, and 120 ergs/cm2 for GaAs, CdTe, and HgTe, respectively.

Published in:

Journal of Applied Physics  (Volume:67 ,  Issue: 10 )