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A model for ion stopping in semiconductors, which considers separate stopping contributions from valence and core electrons, and explicitly includes the effect of the gap, has been used to calculate the electronic stopping power of energetic B, P, and As in Si, Ge, GaAs, and CdTe for projectile energies 10 keV–100 MeV. Account was taken of the partially stripped incident ions by means of the effective charge. There is good agreement at low ion velocity with Lindhard and Scharff’s [J. Lindhard and M. Scharff, Phys. Rev. 124, 128 (1961)] values which for heavy ions do not depend on effective charge theory, as well as with the semiempirical curves at energies E≥0.2 MeV/nucleon where they can be compared.