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Improved uniformity of PtSi Schottky barrier diodes formed using an ion mixing scheme

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3 Author(s)
Hewett, C.A. ; Department of Electrical and Computer Engineering, R‐007, University of California at San Diego, La Jolla, California 92093 ; Fernandes, M.G. ; Lau, S.S.

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Low dose ion implantation through the Pt/Si silicon interface prior to annealing has been shown to yield a more planar PtSi/Si interface after annealing. The electrical characteristics of these ion mixed diodes have also been shown to be more uniform from device to device as well as more nearly approaching theoretical performance than conventionally prepared diodes.

Published in:

Journal of Applied Physics  (Volume:67 ,  Issue: 1 )