By Topic

Piezoelectric properties and elastic constants of 4H and 6H SiC at temperatures 4–320 K

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Karmann, S. ; Institut für Angewandte Physik, Universität Erlangen Glükstrasse 9, D‐8520 Erlangen, Federal Republic of Germany ; Helbig, R. ; Stein, R.A.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

4H and 6H silicon carbide (SiC) crystals are piezoelectric and can be excited to resonant vibrations with quality factors up to Q≊100 000 and an electromechanical coupling factor of k31≊0.03 for 6H material. The resonance frequencies are used for the determination of elastic constants from 4 to 320 K. One finds a Poisson’s ratio σ=0.212 and low‐temperature values s11=2.035×10-12 m2/N and c33=55.12×1010 N/m2 for 6H, s11=2.114×10-12 m2/N, and c33=60.52×1010 N/m2 for 4H crystals. All elastic constants show a nonmonotonic dependence from the temperature at about 50 K.

Published in:

Journal of Applied Physics  (Volume:66 ,  Issue: 8 )