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Piezoelectric properties and elastic constants of 4H and 6H SiC at temperatures 4–320 K

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3 Author(s)
Karmann, S. ; Institut für Angewandte Physik, Universität Erlangen Glükstrasse 9, D‐8520 Erlangen, Federal Republic of Germany ; Helbig, R. ; Stein, R.A.

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4H and 6H silicon carbide (SiC) crystals are piezoelectric and can be excited to resonant vibrations with quality factors up to Q≊100 000 and an electromechanical coupling factor of k31≊0.03 for 6H material. The resonance frequencies are used for the determination of elastic constants from 4 to 320 K. One finds a Poisson’s ratio σ=0.212 and low‐temperature values s11=2.035×10-12 m2/N and c33=55.12×1010 N/m2 for 6H, s11=2.114×10-12 m2/N, and c33=60.52×1010 N/m2 for 4H crystals. All elastic constants show a nonmonotonic dependence from the temperature at about 50 K.

Published in:

Journal of Applied Physics  (Volume:66 ,  Issue: 8 )