Cart (Loading....) | Create Account
Close category search window
 

Structural characterization of molecular‐beam epitaxially grown Zn1-x MnxSe on GaAs(001) substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Qadri, S.B. ; U. S. Naval Research Laboratory, Washington, DC 20375 ; Samarth, N. ; Furdyna, J.K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.344070 

Epitaxially grown single‐crystal films of Zn1-xMnxSe have been characterized by x‐ray diffraction techniques. Their dislocation densities have been estimated from double‐crystal rocking‐curve measurements. Values of the unit cell parameters normal and parallel to the substrate surface, as determined from (004) and (444) reflections, indicate that the films have some degree of tetragonal distortion for higher Mn compositions.

Published in:

Journal of Applied Physics  (Volume:66 ,  Issue: 8 )

Date of Publication:

Oct 1989

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.