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Oxidation of tin on silicon substrate by rapid isothermal processing

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5 Author(s)
Singh, R. ; School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, Oklahoma 73019 ; Chou, P. ; Radpour, F. ; Nelson, A.J.
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We report an oxidation study of an Sn overlayer on Si(100) carried out at 400 °C by rapid isothermal processing (RIP) and furnace processing. Single oxide phase SnO2 could be obtained only by rapid isothermal processing. Based on x‐ray diffraction, x‐ray photoelectron spectroscopy, high‐frequency capacitance‐voltage characteristics, and breakdown measurements, improved quality of dielectric films was obtained by RIP. A possible explanation based on the difference in the radiation spectrum of the two sources of energy is also given.

Published in:

Journal of Applied Physics  (Volume:66 ,  Issue: 6 )

Date of Publication:

Sep 1989

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