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Formation of PtSi in the presence of Al and a Cr barrier layer

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1 Author(s)
Chang, Chin‐An ; IBM T. J. Watson Research Center, Yorktown Heights, New York 10598

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The effect of Cr as a barrier between PtSi and Al is studied by analyzing the reactions of the Al/Cr/Pt/Si (2000 Å/1000 Å/1000 Å/Si substrate) structures. Electrical measurement shows a rapid rise in sheet resistance after annealing at 400 °C. Structural analysis shows extensive reactions between Al and Cr at such temperatures. The PtSi formed remains little changed until 550 °C, and is converted to PtAl2 at higher temperatures. The results are compared with those using W, Ti‐W, and carbon barriers, and the roles of barrier materials on the stability of the Al/PtSi metallurgy are discussed.

Published in:

Journal of Applied Physics  (Volume:66 ,  Issue: 6 )

Date of Publication:

Sep 1989

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