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1/f noise of indium near the melting transition

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3 Author(s)
Scofield, John H. ; AT&T Bell Laboratories, Holmdel, New Jersey 07733 ; Epworth, R.W. ; Tennant, D.M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.344342 

Measurements of the resistance and 1/f noise of continuous thin‐film indium conductors in the temperature range 140–160 °C for frequencies 0.1–256 Hz are reported. The 250‐nm‐thick, 500‐nm‐wide, 5.0‐μm‐long, six‐probe conductors were fabricated on an oxidized silicon wafer using e‐beam lithography, and were encapsulated with a 500‐nm‐thick layer of Si3 Ni4 . Upon heating, melting occurred at (156±1) °C, whereas upon cooling, solidification occurred at (152±1) °C. The band‐limited variance 〈δr2〉 of the resistance fluctuations was a factor of 10 lower for the liquid than for the solid, while the resistance of the liquid was nearly twice that of the solid. Hence, the relative 1/f noise of the liquid was nearly 40 times lower than that of the solid, in conflict with the results of two‐probe measurements on liquid gallium found in the literature. These new results are consistent with models that attribute the 1/f noise of metals to defects and inconsistent with models that relate the noise to intrinsic mechanisms like phonon scattering or infrared divergences.

Published in:

Journal of Applied Physics  (Volume:66 ,  Issue: 5 )

Date of Publication:

Sep 1989

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