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Damage introduction by implantation of Be and Si into InSb, and its removal by rapid thermal annealing in the range 300–400 °C for 20 s was investigated by Rutherford backscattering and transmission electron microscopy. There is good recovery of the lattice upon annealing at 450 °C provided the InSb was not amorphized during the implantation step. At the same time, there is limited redistribution of Be for these annealing conditions, but for Si there is marked diffusion even during a nominal room‐temperature implant. Lowering the sample temperature to 77 K during the implant stops this redistribution, with a near‐Gaussian ion distribution resulting. The activation of Be is of the order of 50% over the dose range 1013–1015 cm-2. In most cases there is a marked similarity in implant properties of InSb to those of GaSb.