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The effect of the pattern shape of Hall devices in the electrical characterization of Si‐implanted GaAs

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1 Author(s)
Hyuga, Fumiaki ; NTT LSI Laboratories, 3‐1 Morinosato Wakamiya, Atsugi‐shi, Kanagawa, 243‐01 Japan

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We show that the Greek‐cross pattern effectively reduces the error due to finite‐sized contact in Hall‐effect measurements. This pattern enables measurements of areas as small as 4×4 μm, which is comparable to the n‐channel area of GaAs field‐effect transistors. We find that the sheet carrier concentration agrees well with the value derived from the capacitance‐voltage method using this pattern. This indicates that the small Greek‐cross pattern is suitable for electrical property characterization of active layers.

Published in:

Journal of Applied Physics  (Volume:66 ,  Issue: 5 )

Date of Publication:

Sep 1989

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