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The influence of implantation damage on the anomalous diffusion has been observed by varying the relative positions of the boron profile and damage distribution produced by silicon preimplantation at different energies. It is shown that the anomalous diffusion of implanted boron is caused by the implantation damage rather than the fast diffusing interstitial boron. During annealing, the extended defects acting as sinks for point defects retard the anomalous diffusion in and near the defected band, however, for prolonged annealing they begin dissolving and emitting point defects which support the anomalous diffusion.