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In situ boron‐doped silicon films have been deposited by the low‐pressure chemical vapor deposition technique in the pressure and temperature ranges of 1–2.5×10-3 Torr and 515–700 °C, respectively. These films have been investigated by means of x‐ray diffraction and transmission electron microscopy in order to study the influence of the silane partial pressure and deposition temperature on the microstructure of the doped films. X‐ray experiments combined with gradual etching were performed in order to check the in‐depth distribution of the crystallite textures. The microstructure of the boron‐doped and undoped polysilicon films are compared.
Published in:
Journal of Applied Physics
(Volume:66
,
Issue:
10
)
Date of Publication: Nov 1989
- Page(s):
- 4806 - 4811
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.343794
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 July 2009
- Issue Date :
- Nov 1989
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