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Photoreflectance measurements of unintentional impurity concentrations in undoped GaAs

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5 Author(s)
Sydor, Michael ; Department of Physics, University of Minnesota at Duluth, Duluth, Minnesota 55812 ; Angelo, James ; Mitchel, William ; Haas, T.W.
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Modulated photoreflectance is used to measure the unintentional impurity concentrations in undoped epitaxial GaAs. A photoreflectance signal above the band gap spreads with the unintentional impurity concentrations and shows well‐defined Franz–Keldysh peaks whose separation provide a good measure of the current carrier concentrations. In samples less than 3 μm thick, a photoreflectance signal at the band edge contains a substrate‐epilayer interface effect which precludes the analysis of the data by using the customary third derivative functional fits for low electric fields.

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Journal of Applied Physics  (Volume:66 ,  Issue: 1 )