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The role of hydrogen in altering the electrical properties of gold, titanium, and tungsten films

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2 Author(s)
Rodbell, K.P. ; IBM Development Laboratory, General Technology Division, Hopewell Junction, New York 12533‐0999 ; Ficalora, P.J.

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Hydrogen was found to alter the electrical properties of gold (Au), titanium (Ti), and tungsten (W) thin films deposited on SiO2/Si substrates. Specifically, the addition of H2 was found to reduce both hillock growth and the rate of electromigration in Au and Ti films. The resistance and 1/f noise of unpassivated Au, Ti, and W films was also found to decrease in H2. The influence of H2 adsorption, absorption, compound formation, and film crystal structure [Au (fcc), Ti (hcp), and W (bcc)] on the rate of electromigration is explored. The data suggest that a modification of the stress state at the metal film/substrate interface is responsible for the decreased resistance, 1/f noise, and electromigration rates observed in H2.

Published in:

Journal of Applied Physics  (Volume:65 ,  Issue: 8 )