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Tantalum nitride as a diffusion barrier between Pd2Si or CoSi2 and aluminum

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4 Author(s)
Farooq, M.A. ; Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 ; Murarka, S.P. ; Chang, C.C. ; Baiocchi, F.A.

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Reactively sputtered tantalum nitride (Ta2N) has been investigated as a diffusion barrier between Pd2Si and aluminum and CoSi2 and Al. Ta2N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 °C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n‐Si/Pd2Si/Ta2N/Al were excellent and showed no deterioration after annealing at 500 °C. However, similar devices with CoSi2 contacts and Ta2N barrier showed a creation of high contact resistance between the silicide and the as‐deposited nitride.

Published in:

Journal of Applied Physics  (Volume:65 ,  Issue: 8 )