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Atomic and carrier profiles of 1‐, 2‐, 4‐, and 6‐MeV 30Si implanted into GaAs

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4 Author(s)
Thompson, Phillip E. ; Naval Research Laboratory, Code 6823, 4555 Overlook Avenue, SW, Washington, DC 20375‐5000 ; Wilson, Robert G. ; Ingram, D.C. ; Pronko, Peter P.

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30Si has been implanted in GaAs at energies of 1, 2, 4, and 6 MeV. We have measured atomic concentration profiles using secondary ion mass spectroscopy (SIMS) and carrier concentration profiles using an electrolytic capacitance‐voltage procedure. Theoretical atomic profiles have been calculated using the computer code TRIM‐86. The range statistics and profile shape factors: Rm, Rp, ΔRp, skewness (γ1), kurtosis (β2), and maximum Si density (Nmax) have been determined from the SIMS data. The first two moments (Rp and ΔRp) were also obtained from the carrier profiles and the theoretical profiles. The range and standard deviation obtained by the separate techniques have a maximum difference of only 15%, and the difference is usually less than 10%. This is less than the mutual experimental uncertainty of 17%. The samples were activated using a furnace anneal (800 °C, 15 min) with a Si3N4 cap and using rapid thermal anneal (1000 °C, 10 s) with and without a cap. No redistribution of Si was observed for any of the anneal conditions.

Published in:

Journal of Applied Physics  (Volume:65 ,  Issue: 8 )