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The behavior of As‐related structural defects (dislocation loops and As precipitates) and the changes in EL2 concentration during bulk annealing of an As‐rich GaAs crystal were studied in the temperature range of 500–900 °C. Results show that the EL2 concentration increases and that some structural defects dissolve during bulk annealing above 600 °C, indicating that the source of point defects necessary to form EL2 during bulk annealing is the excess As condensed during crystal growth in various forms. It was observed that the excess As condenses as point defects, dislocation loops, and/or As precipitates, depending upon the cooling rate from high temperatures and availability of nucleation sites (dislocations). It was also determined that the solvus temperature for the crystal studied, with an excess As concentration of about 1016/cm3, lies between 600 and 700 °C.