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PbSnTe double‐heterostructure lasers and PbEuTe double‐heterostructure lasers by hot‐wall epitaxy

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1 Author(s)
Nishijima, Yoshito ; Fujitsu Laboratories Ltd., 10‐1 Morinosato‐Wakamiya, Atsugi 243‐01, Japan

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Pb1-x Snx Te, double‐heterostructure (DH) lasers and Pb1-x Eux Te DH lasers produced by hot‐wall epitaxy have been studied. The growth temperature for both laser crystals is 300 °C. This is lower than the growth temperatures obtainable by molecular‐beam epitaxy and liquid phase epitaxy. By investigating the I‐V characteristics of Pb1-x Snx Te DH lasers with x values greater than 0.2, it was confirmed that the band structure of the p‐n heterojunction is type 1’. A Pb1-x Snx Te1-y Sey layer, rather than a PbTe1-y Sey layer, should be used for the cladding layer of Pb1-x Snx Te DH lasers with x values greater than 0.2. One of the primary factors preventing an increase in the maximum operating temperature to 200 K is that the carrier density injected into the active layer is not sufficient for laser emissions over 200 K due to the p‐n heterojunction of the type 1’ band structure. The band structure of the p‐n heterojunction of Pb1-x Eux Te DH lasers is type 1. Therefore, the maximum operating temperatures of the Pb1-x Eux Te DH lasers are expected to be greater than those of Pb1-x Snx Te DH lasers. The maximum operating temperature of Pb1-x Eux Te DH lasers exceeded 200 K. The maximum operating temperature of the laser with a PbTe active layer was 170 K under CW operation and 243 K under pulsed operation. This temperature was nearly 50 K higher than the maximum pulsed operation temperature of Pb1-x Snx Te DH lasers.

Published in:

Journal of Applied Physics  (Volume:65 ,  Issue: 3 )