By Topic

Characterization of deep levels in Bi12GeO20 by photoinduced current transient spectroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Benjelloun, N. ; Groupe d’Optique Nonlinéaire et d’Optoélectronique, Institut de Physique et Chimie des Matériaux de Strasbourg, Unité Mixte 380046, Centre National de La Recherche Scientifique, Université Louis Pasteur, Ecole Européenne des Hautes Etudes des Industries Chimiques de Strasbourg, 5 rue de l’Université, 67084 Strasbourg, Cedex France ; Tapiero, M. ; Zielinger, J.P. ; Launay, J.C.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.341362 

A systematic investigation of deep levels in undoped and doped (Fe, Fe/V, excess of Bi) single crystals of Bi12 GeO20 (BGO) has been performed by photoinduced current transient spectroscopy. A list of traps in the energy range 0.1–1.0 eV with their thermal characteristics and their concentrations has been drawn up. Ten different levels have been detected, a few of them subdividing probably into substructures. In all probability, these trap species are present simultaneously in all the crystals but their concentrations differ considerably (typically from less than 1012 up to 5×1015 cm-3 ) so that dominant levels emerge. Variations in the number, nature, and concentration of the dominant centers were observed from preparation to preparation even for undoped BGO. This makes it difficult to draw reliable conclusions concerning the effect of doping, though some of the observed changes are probably directly related to Fe or Fe/V doping. This study of BGO also enabled us to test the experimental tool that we have worked out and progressively refined.

Published in:

Journal of Applied Physics  (Volume:64 ,  Issue: 8 )