By Topic

Bonding configuration of fluorine in fluorinated silicon nitride films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Fujita, Shizuo ; Department of Electrical Engineering, Kyoto University, Kyoto 606, Japan ; Toyoshima, Hideo ; Sasaki, Akio

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Bonding configuration of constituent elements in fluorinated silicon nitride insulating films prepared by reactive plasma of SiF4 (or SiF2), N2, and H2 gas mixture is investigated by means of optical absorption analysis and electron‐spin resonance study. Fluorine is bonded to silicon rather than to nitrogen. Slight variations of spin density and optical gap with chemical composition are attributed to the complemental increase of fluorine with decrease of nitrogen, and to the passivation of silicon dangling bonds by fluorine atoms.

Published in:

Journal of Applied Physics  (Volume:64 ,  Issue: 7 )