Cart (Loading....) | Create Account
Close category search window
 

Effect of Schottky barrier height on EL2 measurement by deep‐level transient spectroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ma, Q.Y. ; Microelectronics Sciences Laboratories, Columbia University, New York, NY 10027 ; Schmidt, M.T. ; Wu, X. ; Evans, H.L.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.341655 

A systematic study of EL2 midgap trap in GaAs using deep‐level transient spectroscopy (DLTS) is reported for contacts having a large range of Schottky barrier height. The results show that the DLTS signal of EL2 increases as the barrier height rises from 0.62 eV and saturates for barrier height above 0.83 eV. It is found, for the first time, that for Schottky barrier height lower than 0.62 eV the EL2 signal disappears. A model for calculation of the quasi‐Fermi level in the depletion region is used to explain the variation and disappearance of the EL2 signal. This model may also apply to other electron traps near midgap.

Published in:

Journal of Applied Physics  (Volume:64 ,  Issue: 5 )

Date of Publication:

Sep 1988

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.