By Topic

Deep electron traps in GaAs/n‐AlxGa1-xAs single‐quantum wells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
As, D.J. ; IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland ; Epperlein, P.W. ; Mooney, P.M.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Deep‐level‐transient spectroscopy on molecular‐beam epitaxially grown square GaAs/ n‐AlxGa1-x As (x=0.24–0.39) single‐quantum wells shows a series of electron traps in the AlGaAs with energies EC-ET at 0.12, 0.22, 0.29, 0.52, and 0.63 eV and with concentrations of about 5×1015 cm-3. The defects are located in the upper AlGaAs layer near the GaAs well layer. The trap concentrations and the widths of the spatial trap distributions (typically 15 nm) are independent of the well width. For all traps, a nonexponential capture process which is logarithmic in time is observed. Time‐dependent depth profiling shows a virtual shift of the trap distribution to the surface for shorter filling pulses. Both effects are due to the nonabrupt depletion edge (Debye tail). No direct emission from the quantum wells is observed.

Published in:

Journal of Applied Physics  (Volume:64 ,  Issue: 5 )