By Topic

X‐ray topographs of silicon crystals with superposed oxide film. A theoretical study by means of simulations

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
1 Author(s)

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Stresses induced in a silicon wafer by mask edges or recessed oxides may be studied by the means of x‐ray topographs. The contrast of such topographs has been previously studied using the Blech and Meieran theory [J. Appl. Phys. 38, 2913 (1967)] for the stresses and Kato’s theory [Acta Crystallogr. 16, 282 (1963)] for the diffraction. Simulations using Takagi’s equations [S. Takagi, Acta Crystallogr. 15, 1131 (1962)] show that this model is not correct: the magnitude of stresses is too large and should lead to additional fringes in the image. This could not be predicted using Kato’s theory where the interaction between the wavefields and the most deformed areas of the crystal is underestimated. It suggests that a relaxation occurs along the surface to decrease the value of the stresses.

Published in:

Journal of Applied Physics  (Volume:64 ,  Issue: 1 )