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Reactive sticking coefficients (RSCs) were measured for silane and disilane on polycrystalline silicon for a wide range of temperature and flux (pressure) conditions. The data were obtained from deposition‐rate measurements using molecular beam scattering and a very low‐pressure cold‐wall reactor. The RSCs have nonlinear Arrhenius temperature dependencies and decrease with increasing flux at low (710 °C) temperatures. Several simple models are proposed to explain these observations. The results are compared with previous studies of the SiH
Published in:
Journal of Applied Physics
(Volume:63
,
Issue:
8
)
Date of Publication: Apr 1988
- Page(s):
- 2808 - 2819
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.340982
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 July 2009
- Issue Date :
- Apr 1988
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