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Optical investigations of ion implant damage in silicon

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4 Author(s)
Hummel, R.E. ; Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 ; Xi, Wei ; Holloway, P.H. ; Jones, K.A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.340996 

Ion implantation damage in silicon has been studied utilizing a new optical technique (differential reflectometry). It has been demonstrated that differential reflectometry can be used to identify whether an implanted layer is crystalline, damaged crystalline, or amorphous. The intensity of interband transitions can be used to determine the thickness of a damaged crystalline layer over a submerged amorphous layer. Interference effects were utilized to determine the thickness of an amorphous layer. Thus, differential optical reflectance has far‐reaching potential for characterizing implanted substrates.

Published in:

Journal of Applied Physics  (Volume:63 ,  Issue: 8 )

Date of Publication:

Apr 1988

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