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Metastable carrier concentration in GaAs/GaAlAs heterostructure under hydrostatic pressure

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8 Author(s)
Suski, T. ; High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29/37, 01‐142 Warsaw, Poland ; Litwin‐Staszewska, E. ; Wisniewski, P. ; Dmowski, L.
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Different aspects of the metastable character of Si‐related localized states in modulation‐doped heterostructures of GaAs/GaAlAs have been studied. Hydrostatic pressure was used to change the two‐dimensional electron‐gas concentration at the active interface of the system. The performed studies give evidence that below a critical temperature of Tc=135 K for a given sample, at the same temperature and pressure conditions, an arbitrary carrier concentration in the quantum well can be obtained depending on the pressure at which the sample was cooled.

Published in:

Journal of Applied Physics  (Volume:63 ,  Issue: 7 )