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A magnetic multipole reactor for high‐flux reactive‐ion etching

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3 Author(s)
Kuypers, A.D. ; Fundamenteel Onderzoek der Materie‐Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands ; Granneman, E.H.A. ; Hopman, H.J.

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A 13.56‐MHz rf discharge has been combined with two kinds of magnetic field. A multipole field, generated by permanent magnets in the surrounding walls, is used to confine the plasma. Superimposed on this is a variable magnetic field parallel to the substrate surface, which is shown to give a considerable increase in plasma density and reduction of electrode self‐bias. Etch rates of SiO2 in a CF4 discharge of 5000 Å/min at mTorr pressures are presented.

Published in:

Journal of Applied Physics  (Volume:63 ,  Issue: 6 )