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A 1 GHz CMOS RF front-end IC for a direct-conversion wireless receiver

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4 Author(s)
Rofougaran, A. ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Chang, J.Y.-C. ; Rofougaran, M. ; Abidi, A.A.

An integrated low-noise amplifier and downconversion mixer operating at 1 GHz has been fabricated for the first time in 1 μm CMOS. The overall conversion gain is almost 20 dB, the double-sideband noise figure is 3.2 dB, the IIP3 is +8 dBm, and the circuit takes 9 mA from a 3 V supply. Circuit design methods which exploit the features of CMOS well suited to these functions are in large part responsible for this performance. The front-end is also characterized in several other ways relevant to direct-conversion receivers

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:31 ,  Issue: 7 )

Date of Publication:

Jul 1996

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