By Topic

Addendum: ‘‘Carrier concentration and activation energy in heavily donor‐doped silicon’’ [J. Appl. Phys. 61, 591 (1987 )]

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Schechter, Daniel ; Department of Physics‐Astronomy, California State University at Long Beach, Long Beach, California 90840

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.339997 

In a previous paper [D. Schechter, J. Appl. Phys. 61, 591 (1987)] the Lee–McGill model for computing the populations and carrier concentrations in heavily doped n‐type silicon was systematically explored. In this addendum, the carrier concentration calculated using the Lee–McGill model is calculated as the doping density is decreased, and is compared with that calculated using the usual dilute doping model. In particular, the extent to which the predictions of the two models agree is explored. It is found that at room temperature the two models agree very closely for doping concentrations below 1×1017 cm-3, but at reduced temperatures the coincidence is not so close.

Published in:

Journal of Applied Physics  (Volume:63 ,  Issue: 4 )