By Topic

The microstructure and electrical properties of contacts formed in the Ni/Al/Si system due to rapid thermal processing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Katz, A. ; Department of Materials Engineering, Technion‐Israel Institute of Technology, Haifa 32000, Israel ; Komem, Y.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.340329 

The microstructure and electrical properties of the contacts formed in the Ni(30 nm)/Al(10 nm)/〈100〉n‐Si system due to rapid thermal processing were studied at temperatures between 300 and 900 °C. A melting at the intermediate Al layer was observed already at about 580 °C after 2‐s heat treatments. This rapid eutectic melting, assumed to initiate at the Al‐Si interface, resulted in the formation of a unique contact composed of the Ni(Al0.5Si0.5)/Al3Ni/NixSiy/n‐Si structure with fairly smooth interfaces between the layers. The sheet resistance of the layers and the Schottky barrier height of the contact were measured as a function of the rapid thermal processing temperatures. As a result of the eutectic melting reaction at 580 °C the sheet resistance of the formed layers decreased from 3.2 to 2.6 Ω/⧠, the Schottky barrier height between the layers and Si increased from 0.61–0.76 eV, and the effective electrically active area of the contact increased. These electrical properties are discussed in correlation with the microstructure formed in the Ni/Al/Si system due to the rapid thermal processing.

Published in:

Journal of Applied Physics  (Volume:63 ,  Issue: 11 )