Close category search window
 

Novel microstructures for the in situ measurement of mechanical properties of thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Mehregany, M. ; Microsystems Technology Laboratories, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 ; Howe, R.T. ; Senturia, S.D.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.339285 

This paper discusses microfabricated structures designed for the in situ measurement of the mechanical properties of thin films under residual tensile stress. The film is deposited and patterned on a (100) silicon substrate in which 5‐μm‐thick diaphragms have been fabricated. When the silicon diaphragm is etched from the backside in an SF6 plasma, the microstructures are released and deform under the residual tension. Measurement of this deformation in conjunction with appropriate mechanical models determines the mechanical properties of interest. We have used these structures to study benzophenonetetracarboxylicdianhidride‐oxydianiline/metaphenylene‐diamine polyimide films. Typical value for the residual stress to modulus ratio in this case was determined to be 0.011±0.001 while the ultimate strain at break was found to be 4.5% for 5.5‐μm‐thick films. For thicker films (8.5 μm), the film did not fail until 8% strain was reached.

Published in:
Journal of Applied Physics  (Volume:62 ,  Issue: 9 )

Date of Publication: Nov 1987

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.